Journal of Modeling and Simulation of Materials https://journals.aijr.in/index.php/jmsm <p align="justify"><a title="Click for Journal homepage" href="https://doi.org/10.21467/jmsm" target="_blank" rel="noopener"><img style="float: right; padding-left: 15px; padding-right: 5px;" src="/public/site/images/aabahishti/cover_page_JMSM.jpg" alt="JMSM"></a>Journal of Modeling and Simulation of Materials (JMSM) is an international journal dedicated to the latest advancements in modeling and simulation of materials published by&nbsp;AIJR Publisher. JMSM (<em>J. Mod. Sim. Mater.</em>) invites scientists and engineers in all aspects of modeling and simulation of materials in chemistry, physics, material sciences, engineering and technology to publish the original full-length research papers, timely state-of-the-art reviews and short communications covering the fundamental and applied research.&nbsp;<br>Journal of Modeling and Simulation of Materials is registered with CrossRef with doi:10.21467/jmsm having&nbsp;ISSN:&nbsp;2582-2365 [online].</p> en-US <div id="copyrightNotice"> <p>Author(s) retains full copyright of their article and grants non-exclusive publishing right to&nbsp;this journal and its publisher “<a title="AIJR Publisher homepage" href="https://www.aijr.in/" target="_blank">AIJR</a>&nbsp;(India)”. Author(s) can archive pre-print, post-print and published version/PDF to any open access, institutional repository, social media or personal website provided that Published source must be acknowledged with citation and link to publisher version.<br>Click&nbsp;<a title="Copyright Policy" href="https://www.aijr.in/about/policies/copyright/" target="_blank">here</a>&nbsp;for more information on Copyright policy<br>Click&nbsp;<a title="Licensing Policy" href="/index.php/jmsm/about#licensing" target="_blank">here</a>&nbsp;for more information on Licensing policy</p> </div> jmsm@aijr.in (Editorial Office [JMSM]) amir@aijr.in (Technical Support) Tue, 30 Mar 2021 14:25:04 +0000 OJS 3.2.1.1 http://blogs.law.harvard.edu/tech/rss 60 Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects https://journals.aijr.in/index.php/jmsm/article/view/3572 <p>In this paper, we study the hydrogen-like donor-impurity binding energy of the ground-state change as a function of the well width under the effect of temperature, size, and impurity position. Within the framework of the effective mass approximation, the Schrodinger-Poisson equation has been solved taken account an on-center hydrogen-like impurity in double QWs with rectangular finite confinement potential profile for 10% of indium concentration in the (well region). The eigenvalues and their correspondent eigenvectors have been obtained by the fined element method (FEM). The obtained results are in good agreement with the literature and show that the temperature, size, and the impurity position have a significant impact on the binding energy of a hydrogen-like impurity in symmetric double coupled quantum wells based on non-polar wurtzite (In,Ga) N/GaN core/Shell.</p> Redouane En-nadir, Haddou El Ghazi, Anouar Jorio, Izeddine Zorkani Copyright (c) 2021 Redouane En-nadir, Haddou El Ghazi, Anouar Jorio, Izeddine Zorkani http://creativecommons.org/licenses/by-nc/4.0 https://journals.aijr.in/index.php/jmsm/article/view/3572 Tue, 30 Mar 2021 00:00:00 +0000