Low Temperature Combustion Processed Stable Al Doped ZnO Thin Film Transistor: Process Extendable up to Flexible Devices

Authors

  • Venkateshwarlu Sarangi Department of Electronic Engineering, City University of Hong Kong
  • Srinivas Gandla Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay (IITB), Mumbai

DOI:

https://doi.org/10.21467/jmm.3.1.14-23

Abstract

We report combustion synthesis of polycrystalline Aluminium doped zinc oxide (AZO) at low temperature for next generation low cost, flexible thin film transistor (TFT) application. Solution processed AZO thin film has been characterized by X ray diffraction and atomic force microscopy to confirm crystallinity. In this research work TFT with solution processed AZO as channel layer has been fabricated on both rigid and flexible substrate which exhibits excellent electrical stability and improved field effect mobility of 1.2 cm2V-1S-1, threshold voltage of 15 V and on-off ratio of 106 as compared to pure ZnO based TFT. All the measurements have been carried out with varying Al concentration. Moreover, variation in defect density of AZO with Al concentration which essentially causes significant change in TFT’s performance is demonstrated by chemical composition and bonding state analysis using XPS. Our results suggest that low temperature solution processed AZO TFTs have a potential for low cost, flexible and transparent electronic applications.

Keywords:

Aluminium, ZnO, Combustion synthesis, Doping, Flexible Films, Thin Film Transistor, TFT, Flexible Devices, Low temperature, Spin Coating, XRD, SEM, AFM, XPS

Downloads

Download data is not yet available.

References

L. Lan, P. Xiao, M. Li, H. Xu, R. Yao, S. Wen, and J. Peng, “Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-band-gap Ta2O5,” Appl. Phys. Lett., vol. 102, no. 24, p. 242102, 2013.

S. Stankovich, D. A. Dikin, G. H. B. Dommett, K. M. Kohlhaas, E. J. Zimney, E. A. Stach, R. D. Piner, S. T. Nguyen, and R. S. Ruoff, “Graphene-based composite materials.,” Nature, vol. 442, no. 7100, pp. 282–286, 2006. View

C. Li, Y. Li, Y. Wu, B. Ong, and R. Loutfy, “Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors,” J. Mater. Chem., vol. 19, pp. 1626–16341634, 2009.

X. Xu, L. Feng, S. He, Y. Jin, and X. Guo, “Solution-processed zinc oxide thin-film transistors with a low-temperature polymer passivation layer,” IEEE Electron Device Lett., vol. 33, no. 10, pp. 1420–1422, 2012.

P. F. Carcia, R. S. McLean, and M. H. Reilly, “High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition,” Appl. Phys. Lett., vol. 88, no. 2006, pp. 10–13, 2006.

J. H. Jun, B. Park, K. Cho, and S. Kim, “Flexible TFTs based on solution-processed ZnO nanoparticles.,” Nanotechnology, vol. 20, p. 505201, 2009.

S. Y. Park, B. J. Kim, K. Kim, M. S. Kang, K. H. Lim, T. Il Lee, J. M. Myoung, H. K. Baik, J. H. Cho, and Y. S. Kim, “Low-temperature, solution-processed and alkali metal doped zno for high-performance thin-film transistors,” Adv. Mater., vol. 24, pp. 834–838, 2012.

K. K. Banger, Y. Yamashita, K. Mori, R. L. Peterson, T. Leedham, J. Rickard, and H. Sirringhaus, “Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process.,” Nat. Mater., vol. 10, no. 1, pp. 45–50, 2011.

Y. H. Kang, S. Jeong, J. M. Ko, J.-Y. Lee, Y. Choi, C. Lee, and S. Y. Cho, “Two-component solution processing of oxide semiconductors for thin-film transistors via self-combustion reaction,” J. Mater. Chem. C, vol. 2, no. 21, pp. 4247-4256, 2014.

H. Wang, T. Sun, W. Xu, F. Xie, L. Ye, Y. Xiao, Y. Wang, J. Chen, and J. Xu, “RSC Advances dielectric for combustion derived oxide thin fi lm,” RSC Adv., vol. 4, no. 3, pp. 54729–54739, 2014.

Hennek, Jonathan W., Jeremy Smith, Aiming Yan, Myung-Gil Kim, Wei Zhao, Vinayak P. Dravid, Antonio Facchetti, and Tobin J. Marks, “Oxygen “getter” effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X= Ga, Sc, Y, La) transistors." J. Am. Chem. Soc, 135, no. 29, pp. 10729-10741, 2013.

S. Jeong and J. Moon, “Low-temperature, solution-processed metal oxide thin film transistors,” J. Mater. Chem., vol. 22, pp.1243-1250, 2012.

M.-G. Kim, M. G. Kanatzidis, A. Facchetti, and T. J. Marks, “Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing.,” Nat. Mater., vol. 10, no. 5, pp. 382–388, 2011.

L. Lu, M. Echizen, T. Nishida, Y. Ishikawa, K. Uchiyama, and Y. Uraoka, “Low-temperature fabrication of solution-processed InZnO thin-film transistors with Si impurities by UV∕O3-assisted annealing,” AIP Adv., vol. 2, no. 3, p. 032111, 2012.

W. H. Lee, J. Park, S. H. Sim, S. B. Jo, K. S. Kim, B. H. Hong, and K. Cho, “Transparent flexible organic transistors based on monolayer graphene electrodes on plastic,” Adv. Mater., vol. 23, no. 15, pp. 1752–1756, 2011.

Y. Cao, M. L. Steigerwald, C. Nuckolls, and X. Guo, “Current trends in shrinking the channel length of organic transistors down to the nanoscale,” Adv. Mater., vol. 22, no. 1, pp. 20–32, 2010.

J. Cai, D. Han, Y. Geng, W. Wang, L. Wang, S. Zhang, and Y. Wang, “High-performance transparent AZO TFTs fabricated on glass substrate,” IEEE Trans. Electron Devices, vol. 60, no. 7, pp. 2432–2435, 2013.

W. Wang, D. H. Ã, J. Cai, Y. Geng, L. Wang, and L. Wang, “Fully Transparent Al-Doped ZnO Thin-Film Transistors on Flexible Plastic Substrates Fully Transparent Al-Doped ZnO Thin-Film Transistors on Flexible Plastic Substrates,” Japanese Journal of Applied Physics vol. 10, no.4S, pp. 2–5, 2013.

A. Suresh and J. F. Muth, “Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors,” Appl. Phys. Lett., vol. 92, no. 2008, 2008.

Downloads

Published

2016-12-11

Issue

Section

Research Article

How to Cite

[1]
V. Sarangi and S. Gandla, “Low Temperature Combustion Processed Stable Al Doped ZnO Thin Film Transistor: Process Extendable up to Flexible Devices”, J. Mod. Mater., vol. 3, no. 1, pp. 14–23, Dec. 2016.