Laser Irradiation Effect on the Optical Band Gap of Se-Te-Al Thin Films

Adam A Bahishti; Islam Uddin; M. Zulfequar

doi:10.21467/ias.1.1.8-14

Authors

Adam A Bahishti Department of Physics, College of Science in Zulfi, Majmaah University, Majmaah 11952, Saudi Arabia https://orcid.org/0000-0002-9389-9574
Islam Uddin Qassim University (KSA)
M. Zulfequar Jamia Millia Islamia

DOI:

https://doi.org/10.21467/ias.1.1.8-14

Abstract

Laser irradiation effect on the optical band gap of Se-Te-Al thin films has been studied. Optical data Analysis of thin films indicates indirect allowed transition in the Se-Te-Al system. Analysis of the result reveals that the optical band gap decreases with increasing irradiation time as well as Aluminum content. However, laser irradiation does not show a significant effect at higher Aluminum concentration. It might be due to lack of weak Se-Te bond as Te content decreases with increasing Al content. It shows that alloy with rich Al content is more stable against laser irradiation. It is also observed that absorption coefficient and extinction coefficient increases with laser irradiation time.

Keywords:

Laser Irradiation, Chalcogenide alloy, Thin films, Irradiation effect, optical band gap, Se-Te-Al system

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Author Biographies

Islam Uddin, Qassim University (KSA)

Department of Physics, Deanship of educational services

M. Zulfequar, Jamia Millia Islamia

Department of Physics

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